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| 2SK1297 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1297 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW d 10 Ps, duty cycle d 1% 2. Value at TC = 25qC Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings 60 Unit V V A A A W r20 40 160 40 100 150 -55 to +150 qC qC 2 2SK1297 Electrical Characteristics (Ta = 25GC) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 60 Typ -- -- -- -- -- 0.015 0.02 35 3600 1850 450 30 170 700 350 1.2 155 Max -- -- Unit V V Test conditions ID = 10 mA, VGS = 0 IG = r100 PA, VDS = 0 VGS = r16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V * ID = 20 A, VGS = 4 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 1 r20 -- -- 1.0 -- -- r10 250 2.0 0.018 0.025 -- -- -- -- -- -- -- -- -- -- Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance PA PA V : : S pF pF pF ns ns ns ns V ns Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 22 -- -- -- -- -- -- -- -- -- ID = 20 A, VDS = 10 V * 1 ID = 20 A, VGS = 10 V, RL = 1.5 : IF = 40 A, VGS = 0 IF = 40 A, VGS = 0, diF/dt = 50 A/Ps 3 2SK1297 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 Drain Current ID (A) 10 s 0 10 100 1 PW s 80 50 D C s m m = 10 20 10 5 2 1.0 1 s( Sh ot ) pe O tio ra n 40 Operation in this area is limited by RDS (on) Ta = 25C (T C = 25 C ) 0 50 100 Case Temperature TC (C) 150 0.5 0.1 0.3 1.0 3 10 100 30 Drain to Source Voltage VDS (V) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () 0.04 Pulse Test ID = 50 A 10 A, 20 A VGS = 4 V Forward Transfer Admittance yfs (S) 0.05 50 20 10 5 2 1.0 0.03 -25C TC = 25C 75C 0.02 50 A 0.01 VGS = 10 V 10 A, 20 A VDS = 10 V Pulse Test 0 -40 0 40 80 120 Case Temperature TC (C) 160 0.5 1.0 20 2 10 5 Drain Current ID (A) 50 Body to Drain Diode Reverse Recovery Time 500 Typical Capacitance vs. Drain to Source Voltage 10000 Ciss VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 200 Capacitance C (pF) 100 50 20 10 5 0.5 1000 Coss Crss 100 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 10 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) 4 2SK1297 Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) Switching Characteristics 20 Gate to Source Voltage VGS (V) 1000 td (off) tf 60 VDD = 10 V 25 V 50 V VDS VGS 50 V Switching Time t (ns) 80 16 500 200 100 50 tr 12 40 20 8 4 td (on) 20 10 0.5 VGS = 10 V VDD = 30 V PW = 2s, duty < 1 % * * 25 V VDD = 10 V 0 ID = 40 A 40 80 120 160 Gate Charge Qg (nc) 0 200 1.0 5 2 10 20 Drain Current ID (A) 50 Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) 80 Pulse Test 60 10 V 40 20 5V VGS = 0, - 5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 5 2SK1297 Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 TC = 25C 0.05 0.02 .01 Pulse 0.03 0 hot 1S ch-c (t) = s (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM PW T 100 1m 10 m Pulse Width PW (s) 100 m 1 10 D =PW T 0.01 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Wavewforms 90 % Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf 6 2SK1297 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7 |
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